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SKP15N60,
SKB15N60 SKW15N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability * Very soft, fast recovery anti-parallel EmCon diode
C
G
E
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC)
* Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKP15N60 SKB15N60 SKW15N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Tj , Tstg -55...+150 C
1)
VCE 600V
IC 15A
VCE(sat) 2.3V
Tj 150C
Package TO-220AB TO-263AB TO-247AC
Ordering Code Q67040-S4251 Q67040-S4252 Q67040-S4243
Symbol VCE IC
Value 600 31 15
Unit V A
ICpul s IF
62 62
31 15 IFpul s VGE tSC Ptot 62 20 10 139 V s W
VGE = 15V, VCC 600V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
SKP15N60,
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
SKB15N60 SKW15N60
Max. Value Unit
Symbol
Conditions
RthJC RthJCD RthJA RthJA TO-220AB TO-247AC TO-263AB
0.9 1.7 62 40 40
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 1 5 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 40 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 1.2 3 3 Typ. 2 2.3 1.4 1.25 4 10.9 800 84 52 76 7 13 150 max. 2.4 2.8 1.8 1.65 5
Unit
V
A 40 2000 100 960 101 62 99 A nC nH nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 15 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =1 5 A V G E = 15 V T O - 22 0A B T O - 24 7A C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Jul-02
1)
2
SKP15N60,
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 C , V R = 2 00 V , I F = 1 5 A, d i F / d t =2 0 0 A/ s td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 21 , 1) L = 18 0 nH , 1) C = 25 0 pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions
SKB15N60 SKW15N60
Value min. typ. 32 23 234 46 0.30 0.27 0.57 279 28 254 390 5.0 180 max. 38 28 281 55 0.36 0.35 0.71 nC A A/s ns mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 C V R = 2 00 V , I F = 1 5 A, d i F / d t =2 0 0 A/ s 360 40 320 1020 7.5 200 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 21 , 1) L = 18 0 nH , 1) C = 25 0 pF Energy losses include "tail" and diode reverse recovery. 31 23 261 54 0.45 0.41 0.86 38 28 313 65 0.54 0.53 1.07 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E. 3 Jul-02
SKP15N60,
80A
100A
SKB15N60 SKW15N60
tp=5s 15s
Ic
70A 60A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A 50s
50A 40A 30A TC=110C 20A 10A 0A 10Hz TC=80C
200s 1A 1ms
Ic
DC 0.1A 1V 10V 100V 1000V
100Hz
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 21)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
35A
140W
30A
120W 100W 80W 60W 40W 20W 0W 25C
IC, COLLECTOR CURRENT
50C 75C 100C 125C
Ptot, POWER DISSIPATION
25A 20A 15A 10A 5A 0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
4
Jul-02
SKP15N60,
50A 45A 40A
50A 45A 40A
SKB15N60 SKW15N60
IC, COLLECTOR CURRENT
35A 30A 25A 20A 15A 10A 5A 0A 0V
IC, COLLECTOR CURRENT
VGE=20V 15V 13V 11V 9V 7V 5V
35A 30A 25A 20A 15A 10A 5A 0A 0V
VGE=20V 15V 13V 11V 9V 7V 5V
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
45A 40A
Tj=+25C -55C +150C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
50A
4.0V
3.5V
IC = 30A
3.0V
IC, COLLECTOR CURRENT
35A 30A 25A 20A 15A 10A 5A 0A 0V
2.5V
IC = 15A
2.0V
1.5V
2V
4V
6V
8V
10V
1.0V
-50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Jul-02
SKP15N60,
SKB15N60 SKW15N60
td(off)
td(off)
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
100ns tf td(on) tr
td(on) tr
10ns 5A
10A
15A
20A
25A
30A
10ns 0
20
40
60
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 21, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 15A, Dynamic test circuit in Figure E)
5.5V
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V typ. max.
t, SWITCHING TIMES
100ns
tf tr td(on)
min.
10ns 0C
50C
100C
150C
-50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 15A, RG = 2 1, Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.4mA)
6
Jul-02
SKP15N60,
SKB15N60 SKW15N60
Ets*
1.8mJ 1.6mJ
*) Eon and Ets include losses due to diode recovery.
1.4mJ
Ets*
1.2mJ
*) Eon and Ets include losses due to diode recovery.
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
1.4mJ 1.2mJ 1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ 0.0mJ 0A Eon* Eoff
1.0mJ 0.8mJ Eoff 0.6mJ 0.4mJ 0.2mJ 0.0mJ 0 Eon*
5A
10A
15A
20A
25A
30A
35A
20
40
60
80
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 21, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 15A, Dynamic test circuit in Figure E)
1.0mJ Ets*
ZthJC, TRANSIENT THERMAL IMPEDANCE
*) Eon and Ets include losses due to diode recovery.
10 K/W D=0.5 0.2 10 K/W
-1
0
E, SWITCHING ENERGY LOSSES
0.8mJ
0.1 0.05 0.02
0.6mJ Eon* 0.4mJ Eoff
10 K/W 0.01
-2
R,(1/W) 0.5321 0.2047 0.1304 0.0027
R1
, (s)= 0.04968 2.58*10-3 2.54*10-4 3.06*10-4
R2
0.2mJ
10 K/W single pulse
-3
C 1= 1/R 1
C 2= 2/R 2
0.0mJ 0C
50C
100C
150C
10 K/W 1s
-4
10s
100s
1ms
10ms 100ms
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 15A, RG = 2 1, Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Jul-02
SKP15N60,
25V
1nF
SKB15N60 SKW15N60
20V
Ciss
VGE, GATE-EMITTER VOLTAGE
15V 120V 480V
C, CAPACITANCE
100pF
Coss
10V
Crss
5V
0V 0nC
25nC
50nC
75nC
100nC
10pF 0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 15A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
250A
20 s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
tsc, SHORT CIRCUIT WITHSTAND TIME
200A
15 s
150A
10 s
100A
5 s
50A
0 s 10V
11V
12V
13V
14V
15V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
8
Jul-02
SKP15N60,
500ns
2000nC
SKB15N60 SKW15N60
Qrr, REVERSE RECOVERY CHARGE
400ns
trr, REVERSE RECOVERY TIME
IF = 30A
1500nC
IF = 30A
300ns
IF = 15A
200ns
1000nC
IF = 15A
IF = 7.5A
IF = 7.5A
500nC
100ns
0ns 100A/s
300A/s
500A/s
700A/s
900A/s
0nC 100A/s
300A/s
500A/s
700A/s
900A/s
d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
20A
1000A/s
d i r r /d t, DIODE PEAK RATE OF FALL
IF = 30A
12A
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
16A
800A/s
600A/s
IF = 15A IF = 7.5A
8A
400A/s
4A
200A/s
0A 100A/s
300A/s
500A/s
700A/s
900A/s
0A/s 100A/s
300A/s
500A/s
700A/s
900A/s
d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
9
Jul-02
SKP15N60,
30A
SKB15N60 SKW15N60
I F = 30A
2.0V
25A
20A 150C 15A 100C 10A 25C 5A -55C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.5V
I F = 15A
0A 0.0V
0.5V
1.0V
1.5V
2.0V
1.0V
-40C
0C
40C
80C
120C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJCD, TRANSIENT THERMAL IMPEDANCE
10 K/W
0
D=0.5
0.2 0.1 0.05 10 K/W 0.02 0.01 single pulse
C1= 1/R1 C 2 = 2 /R 2
-1
R,(1/W) 0.311 0.271 0.221 0.584 0.314
R1
, (s)= 7.83*10-2 1.21*10-2 1.36*10-3 1.53*10-4 2.50*10-5
R2
10 K/W 1s
-2
10s
100s
1ms
10ms 100ms
1s
tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T)
10
Jul-02
SKP15N60,
TO-220AB
symbol
SKB15N60 SKW15N60
dimensions
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
TO-263AB (D2Pak)
symbol
dimensions
[mm] min max 10.20 1.30 1.60 1.07 min
[inch] max 0.4016 0.0512 0.0630 0.0421
A B C D E F G H K L M N P Q R S T U V W X Y Z
9.80 0.70 1.00 1.03
0.3858 0.0276 0.0394 0.0406
2.54 typ. 0.65 0.85
0.1 typ. 0.0256 0.0335
5.08 typ. 4.30 1.17 9.05 2.30 4.50 1.37 9.45 2.50
0.2 typ. 0.1693 0.0461 0.3563 0.0906 0.1772 0.0539 0.3720 0.0984
15 typ. 0.00 4.20 0.20 5.20
0.5906 typ. 0.0000 0.1654 0.0079 0.2047
8 max 2.40 0.40 10.80 1.15 6.23 4.60 9.40 16.15 3.00 0.60
8 max 0.0945 0.0157 0.1181 0.0236
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
11
Jul-02
SKP15N60,
SKB15N60 SKW15N60
dimensions
TO-247AC
symbol
[mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 min
[inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252
A B C D E F G H K L M N
P
4.78 2.29 1.78 1.09 1.73 2.67
0.1882 0.0902 0.0701 0.0429 0.0681 0.1051
0.76 max 20.80 15.65 5.21 19.81 3.560 21.16 16.15 5.72 20.68 4.930
0.0299 max 0.8189 0.6161 0.2051 0.7799 0.1402 0.8331 0.6358 0.2252 0.8142 0.1941
3.61 6.12 6.22
0.1421 0.2409 0.2449
Q
12
Jul-02
SKP15N60,
i,v diF /dt
SKB15N60 SKW15N60
tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
2
r2
r1
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =250pF.
Published by Infineon Technologies AG,
13
Jul-02
SKP15N60,
Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please!
SKB15N60 SKW15N60
The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
14
Jul-02

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